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RGPR30BM40 400v 30a ignition igbt storage temperature t stg - 55 to +175 c p d 125 w power dissipation operating junction temperature t j - 40 to +175 c i c 30 a collector current avalanche energy (single pulse) t j = 25c e as 300 mj t j = 150c e as *2 180 mj collector - emitter voltage v ces 430 v gate - emitter voltage v ges ? 10 v emitter-collector voltage (v ge = 0v) v ec 25 v l absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit packing code tl marking RGPR30BM40 l packaging specifications 6) pb - free lead plating ; rohs compliant type packaging taping reel size (mm) 330 l applications tape width (mm) 16 ignition coil driver circuits basic ordering unit (pcs) 2,500 solenoid driver circuits 1) low collector - emitter saturation voltage 2) high self-clamped inductive switching energy 3) built in gate-emitter protection diode 4) built in gate-emitter resistance 5) qualified to aec-q101 l features l inner circuit l outline bv ces 400?30v to-252 i c 30a v ce(sat) (typ.) 1.6v e as 300mj (1) (2) (3) (1) gate (2) collector (3) emitter (1) (2) (3) 1/9 2017.05 - rev.a data s heet www.rohm.com ? 2017 rohm co., ltd. all rights reserved.
RGPR30BM40 l thermal resistance l electrical characteristics (at t j = 25c unless otherwise specified) v thermal resistance igbt junction - case r (j-c) - - 1.20 c/w v v v 2.1 v - 1.3 - v - - 100 a ma ? 1.2 collector - emitter saturation voltage v ce(sat) i c = 12a, v ge = 5v t j = 25c - 1.60 t j = 150c - 1.80 2.00 - gate - emitter leakage current i ges v ge = ? 10v, v ce = 0v ? 0.4 ? 0.6 v gate - emitter breakdown voltage bv ges i g = ? 5ma, v ce = 0v ? 12 - ? 17 t j = 25c t j = 150c *2 v v ce = 250v, v ge = 0v - - 7 a collector - emitter saturation voltage v ce(sat) i c = 5a, v ge = 4.5v gate - emitter threshold voltage v ge(th) 1.3 1.7 t j = 25c - 1.17 1.50 t j = 150c - 1.19 - v ce = 5v, i c = 12ma t j = 25c t j = 150c *2 values collector cut - off current i ces collector - emitter breakdown voltage bv ces emitter - collector breakdown voltage bv ec i c = - 10ma, v ge = 0v 25 35 - i c = 2ma, v ge = 0v t j = 25c t j = - 40 to 175c *2 unit min. typ. max. v parameter symbol values unit min. typ. max. 370 400 430 v 365 - 435 parameter symbol conditions 2/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristics (at t j = 25c unless otherwise specified) *1) assurance items according to our measurement definition (fig.18) *2) design assurance items gate - emitter resistance r ge 8 16 24 k 300 - - mj 180 - - mj t j = 25c gate series resistance r g 70 100 v total gate charge q g v ce = 12v, i c = 10a, v ge = 5v - 22 - nc - 1.90 - collector - emitter saturation voltage v ce(sat) t j = 150c 130 t j = 150c *2 - 1.7 - fall time *1 t f - 3.0 - t d(off) i c = 8a, v cc = 300v, v ge = 5v, r g = 100, l=5mh, t j =150c avalanche energy (single pulse) e as l = 5mh, v ge = 5v, v cc = 30v, r g = 1k, s rise time *1 t r - 0.21 - turn - off delay time *1 - 0.18 - turn - on delay time *1 t d(on) 4.0 0.11 0.19 0.50 rise time *1,*2 t r 0.10 0.18 0.50 i c = 8a, v cc = 300v, v ge = 5v, r g = 100, l=5mh, t j =25c turn - on delay time *1,*2 t d(on) fall time *1,*2 t f 0.8 1.8 5.5 s pf output capacitance c oes v ge = 0v - 220 - reverse transfer capacitance c res f = 1mhz - 71 - input capacitance c ies v ce = 10v - 1330 - turn - off delay time *1,*2 t d(off) 0.9 1.4 parameter symbol conditions values unit min. typ. max. t j = 25c - 1.70 2.10 i c = 12a, v ge = 4v v 3/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristic curves fig.1 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.2 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.4 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] fig.3 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] 0 5 10 15 20 25 30 0 1 2 3 4 5 t j = 25oc t j = 25oc v ge = 10v v ge = 8v v ge = 4.5v v ge = 4v v ge = 3.5v v ge = 5v 0 5 10 15 20 25 30 0 1 2 3 4 5 t j = 175oc v ge = 10v v ge = 8v v ge = 4.5v v ge = 4v v ge = 3.5v v ge = 5v 1 1.1 1.2 1.3 1.4 -50 0 50 100 150 200 i c = 5a v ge = 3.5v 4v 4.5v 8v 10v 5v 0 5 10 15 20 25 30 0 1 2 3 4 5 t j = - 40oc v ge = 10v v ge = 8v v ge = 4.5v v ge = 4v v ge = 3.5v v ge = 5v 4/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristic curves fig.5 typical collector to emitter saturation voltage vs. junction temperature fig.6 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical gate to emitter threshold voltage vs. junction temperature gate to emitter threshold voltage : v ge (th) [v] junction temperature : t j [oc] 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -50 0 50 100 150 200 v ce = 5v i c = 10ma 0 5 10 15 20 25 30 0 1 2 3 4 5 v ce = 5v t j = 175oc t j = 25oc t j = - 40oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 0 50 100 150 200 v ge = 5v i c = 30a 20a 10a 5a 4.5a 1a 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -50 0 50 100 150 200 i c = 10a v ge = 3.5v 4v 4.5v 8v 10v 5v 5/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristic curves fig.9 typical leakage current vs. junction temperature leakage current : i ces /i ec [ m a] junction temperature : t j [oc] fig.10 typical collector to emitter breakdown voltage vs. junction temperature collector to emitter breakdown voltage : b v ces [v] junction temperature : t j [oc] fig.11 typical self clamped inductive switching current vs. inductance self clamped inductive switching current : i as [a] inductance : l [mh] fig.12 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 100 1000 10000 -50 0 50 100 150 200 v ces = 300v v ces = 250v v ec = 25v 0 1 2 3 4 5 0 5 10 15 20 25 v cc = 12v i c = 10a t j = 25oc 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 v cc = 30v v ge = 5v r g = 1k 380 390 400 410 -50 0 50 100 150 200 v ge = 0v i ces = 2ma i ces = 1ma 6/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristic curves fig.13 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] switching time [ s] junction temperature : t j [oc] fig.14 typical switching time vs. junction temperature fig.15 forward bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] 0.1 1 10 0 25 50 75 100 125 150 175 200 v cc = 300v, i c = 8a, v ge = 5v, l= 5mh t f t d(off) t r t d(on) 1 10 100 1000 10000 0.01 0.1 1 10 100 f= 1mhz v ge = 0v t j = 25oc c ies c oes c res 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 1 ms 10 ms 7/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
RGPR30BM40 l electrical characteristic curves 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.3 single pulse 0.05 0.01 0.02 fig.16 transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c 8/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet c1 c2 c3 r1 r2 r3 615.3u 3.003m 1.360m 231.2m 160.8m 408.0m
RGPR30BM40 l inductive load switching circuit and waveform l self clamped inductive switching circuit and waveform fig.19 self clamped inductive switching ciruit vg d.u.t. fig.20 self clamped inductive switching waveform e as v ce(sat) i c v ce v cc v clamp t r t off 10% 90% t f t d(on) t d(off) gate drive time v ce(sat) 10% 90% t on v ge i c v ce vg d.u.t. fig.17 inductive load switching circuit fig.18 inductive load switching waveform 9/9 2017.05 - rev.a www.rohm.com ? 2017 rohm co., ltd. all rights reserved. datasheet
r1102 b www.rohm.com ? 2016 rohm co., ltd. all rights reserved. notice rohm cu stomer support sys tem h ttp:// www.r ohm .com/con tact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica- tion s : althou gh rohm is contin uous ly wor king to impr ove p roduct r elia bility and qualit y, semicon- duc tor s c an brea k d ow n and ma lf unction due to var ious f acto rs. the re fore, in or der to prevent per sonal in ju ry or fire ar isi ng f ro m fa ilur e, please ta ke saf ety meas ur es su ch as com plyin g wi th th e der atin g ch ara ct er istic s, imple menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail- sa fe p rocedure s. ro hm shall have no responsibility for any damages ar ising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical system s, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulation s, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) notes
datasheet part number RGPR30BM40hr package to-252 unit quantity 2500 minimum package quantity 2500 packing type taping constitution materials list inquiry rohs yes RGPR30BM40hr - web page

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